公开(公告)号：US12244269B2

公开(公告)日：2025-03-04

申请号：US17544914

申请日：2021-12-07

Applicant: RichWave Technology Corp.

Inventor： Sheng-Ting Chen ,  Chih-Sheng Chen

IPC: H03F3/24 ,  H03F1/02

Abstract: A power amplifier has an amplifying transistor, a first resistor, a bias circuit, a second resistor, and a compensation circuit. The amplifying transistor amplifies a radio frequency (RF) signal to output an amplified RF signal. A control end of the amplifying transistor receives the RF signal. The first resistor provides a first resistance, and a second end of the first resistor is coupled to the control end of the amplifying transistor. The bias circuit has a bias transistor and is coupled to a first end of the first resistor. The second resistor provides a second resistance less than the first resistance, and a second end of the second resistor is coupled to the control end of the amplifying transistor. The compensation circuit has a compensation transistor, and an output end of the compensation circuit is coupled to a first end of the second resistor.