公开(公告)号：US20250169194A1

公开(公告)日：2025-05-22

申请号：US18398178

申请日：2023-12-28

Applicant: RichWave Technology Corp.

Inventor： Ching-Yao Pai ,  Yu-Hung Chen

IPC: H01L27/02

Abstract: Disclosed is an electrostatic discharge (ESD) protection circuit including a main transistor, a resistor element and a control circuit. A first voltage terminal is coupled to a second terminal of the main transistor and a first terminal of the resistor element. A second voltage terminal is coupled to a first terminal of the main transistor. The control circuit is coupled between a second terminal of the resistor element and a control terminal of the main transistor. When an ESD event occurs, the product of the capacitance value of a parasitic capacitance of the control circuit and the resistance value of the resistor element is greater than the duration of the ESD event, and the control circuit turns on the main transistor so that an ESD current flows through the main transistor.

公开(公告)号：US20250167542A1

公开(公告)日：2025-05-22

申请号：US18397960

申请日：2023-12-27

Applicant: RichWave Technology Corp.

Inventor： Ching-Yao Pai ,  Yu-Hung Chen

IPC: H02H9/04

Abstract: A transistor stack circuit including a first signal transmission port, a second signal transmission port, an impedance unit, a plurality of transistors, and a plurality of resistors is provided. The transistors are connected in series and coupled between the first signal transmission port and the second signal transmission port. A first terminal of each resistor is coupled to a common path. A second terminal of each resistor is coupled to a control terminal of a corresponding transistor among the transistors. The impedance unit is coupled between the common path and a reference voltage terminal. When an electrostatic discharge event occurs, an impedance value of the impedance unit is greater than twice of a resistance value of each resistor, and the transistors form a low-impedance path.