RF power device with on-chip digital control and optical interface
    1.
    发明申请
    RF power device with on-chip digital control and optical interface 有权
    射频功率器件具有片上数字控制和光接口

    公开(公告)号:US20050075090A1

    公开(公告)日:2005-04-07

    申请号:US10680836

    申请日:2003-10-07

    CPC分类号: H04B10/801

    摘要: RF power device module (500) having an RF power device chip (206) which integrates an RF power device (208) with at least one of DC detector circuits (201, 202), RF detector circuits (203, 204), and thermal detector circuit (235) which cooperate with optical emitter/detector components (213) that supports a bi-directional optical link (210) made through free space with diagnostic processing and control circuits implemented on a separate chip (214) mounted within the same enclosure (205). The bi-directional optical link (210) enables interpretation of detection signals (227) received from the RF power device chip (206) and the feed back of default or other management and control signals (229) sent back to the RF power device chip (206) in response to the detected and analyzed conditions. The RF power device module (500) can be used in RF power transistors, such used in a base station, or mobile or portable transmitters, used in telecommunications, or in RF power amplifiers and instrumentation amplifiers in general.

    摘要翻译: RF功率器件模块(500)具有RF功率器件芯片(206),其将RF功率器件(208)与DC检测器电路(201,202),RF检测器电路(203,204)和热 检测器电路(235),其与支持通过自由空间制成的双向光学链路(210)的光发射器/检测器部件(213)配合,诊断处理和控制电路实现在安装在同一外壳内的单独芯片(214)上 (205)。 双向光链路(210)使得能够解释从RF功率器件芯片(206)接收的检测信号(227)以及发送回RF功率器件芯片的默认或其他管理和控制信号(229)的反馈 (206)响应于检测和分析的条件。 RF功率器件模块(500)可用于RF功率晶体管,例如在通信中使用的基站或移动或便携式发射机中,或通常用于RF功率放大器和仪表放大器中。

    Integrated semiconductor temperature detection apparatus and method
    2.
    发明申请
    Integrated semiconductor temperature detection apparatus and method 审中-公开
    集成半导体温度检测装置及方法

    公开(公告)号:US20070085161A1

    公开(公告)日:2007-04-19

    申请号:US11252086

    申请日:2005-10-17

    IPC分类号: H01L29/00

    摘要: An integrated semiconductor apparatus (300)(such as, but not limited to, a radio frequency power device) is comprised of a plurality of active device cells (302, 303), a plurality of temperature detectors (304, 305), and a controller (308). The active device cells are preferably each comprised of a plurality of active devices having a common signal input and a common signal output. The temperature detectors are preferably configured and arranged such that each of the temperature detectors detects a temperature indicator (such as infrared radiation) as corresponds to at least one of the active device cells but not, at least in substantial measure, other of the active device cells. The controller preferably operably couples to these temperature detectors and receives their detected output and generates control signals that operate on the inputs to the active device cells in a manner that changes the relative active device cell temperatures.

    摘要翻译: 集成半导体装置(300)(例如但不限于射频功率装置)由多个有源器件单元(302,303),多个温度检测器(304,305)和 控制器(308)。 有源器件单元优选地每个都包括具有公共信号输入和公共信号输出的多个有源器件。 温度检测器优选地被配置和布置成使得每个温度检测器检测到对应于至少一个有源器件单元的温度指示器(例如红外辐射),但至少在实质上不检测其它有源器件 细胞。 控制器优选地可操作地耦合到这些温度检测器并接收其检测到的输出并且以改变相对有源器件单元温度的方式生成对有源器件单元的输入进行操作的控制信号。