公开(公告)号：US09093463B1

公开(公告)日：2015-07-28

申请号：US14537424

申请日：2014-11-10

Applicant: Richtek Technology Corporation

Inventor： Chung-Yu Hung ,  Jian-Hsing Lee ,  Tzu-Cheng Kao ,  Tsung-Yi Huang

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/737

CPC classification number: H01L29/66393 ,  H01L27/0262 ,  H01L29/0649 ,  H01L29/737 ,  H01L29/87

Abstract: A silicon controlled rectifier includes: a substrate; a N well and a P well positioned on a side of the substrate and contact with each other; a first N region and a first P region positioned on an upper surface of the N well and contact with each other; a second N region and a second P region positioned on an upper surface of the P well and contact with each other; a first oxide isolation region isolating the first P region and the second N region; a second oxide isolation region isolating the second N region and the second P region; an anode terminal coupled with the first N region and the first P region; and a cathode terminal coupled with the second N region and the second P region. The first P region has a doping concentration less than 80% of that of the second P region.

Abstract translation: 可控硅整流器包括：基板; N阱和P阱定位在基板的一侧并彼此接触; 第一N区和第一P区，位于N阱的上表面并彼此接触; 第二N区和第二P区，位于P阱的上表面并彼此接触; 隔离所述第一P区和所述第二N区的第一氧化物隔离区; 隔离所述第二N区域和所述第二P区域的第二氧化物隔离区域; 与所述第一N区和所述第一P区耦合的阳极端; 以及与第二N区域和第二P区域耦合的阴极端子。 第一P区的掺杂浓度小于第二P区的掺杂浓度的80％。