Organic electronic circuit and method for making the same
    1.
    发明授权
    Organic electronic circuit and method for making the same 失效
    有机电子电路及其制作方法

    公开(公告)号:US07482624B2

    公开(公告)日:2009-01-27

    申请号:US11185861

    申请日:2005-07-21

    IPC分类号: H01L35/24

    CPC分类号: G11C11/22 B82Y10/00

    摘要: In an organic electronic circuit, particularly a memory circuit with an organic ferroelectric or electret material the active material comprises fluorine atoms and consists of various organic materials. The active material is located between a first electrode and a second electrode. A cell with a capacitor-like structure is defined in the active material and can be accessed for an addressing operation via the first and the second electrode. At least one of these electrodes comprises a layer of chemically modified gold. In a passive matrix-addressable electronic device, particularly a ferroelectric or electret memory device, circuits of this kind with the active material as a ferroelectric or electret memory material form the elements of a matrix-addressable array and define the memory cells provided between first and second set of addressing electrodes. At least the electrodes of at least one of the sets then comprise at least a layer of gold. A method in the fabrication of the organic electronic circuit the method comprises steps for depositing a layer of gold as at least one layer of at least one electrode and treating an exposed surface on this layer chemically, whereafter the layer of active material can be deposited on the top of the processed surface of this electrode.

    摘要翻译: 在有机电子电路中,特别是具有有机铁电或驻极体材料的存储电路,活性材料包含氟原子并由各种有机材料组成。 活性材料位于第一电极和第二电极之间。 具有电容器状结构的电池被限定在活性材料中,并且可以经由第一和第二电极进行寻址操作。 这些电极中的至少一个包括化学修饰的金层。 在无源矩阵寻址电子器件中,特别是铁电或驻极体存储器件中,这种具有作为铁电或驻极体存储器材料的活性材料的电路形成矩阵寻址阵列的元件,并且限定了在第一和第 第二组寻址电极。 至少所述组中的至少一个的电极至少包括一层金。 一种制造有机电子电路的方法,包括以下步骤:将金层作为至少一层至少一个电极沉积,并化学地处理该层上的暴露表面,然后可以将活性材料层沉积在 该电极的加工表面的顶部。

    Method for operating a data storage apparatus employing passive matrix addressing
    2.
    发明授权
    Method for operating a data storage apparatus employing passive matrix addressing 失效
    用于操作采用无源矩阵寻址的数据存储装置的方法

    公开(公告)号:US07646629B2

    公开(公告)日:2010-01-12

    申请号:US12010067

    申请日:2008-01-18

    IPC分类号: G11C11/22

    摘要: In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.

    摘要翻译: 在采用无源矩阵寻址的数据存储装置中避免干扰电压的影响的方法中,用于寻址操作的电位的应用是根据电压脉冲协议。 设备的数据存储单元被提供在两个或更多个电隔离的段中,每个段构成数据存储设备物理地址空间的非重叠物理地址子空间。 每个段中的多个数据存储单元通过具有特定极化的有源电压脉冲预设为相同的极化。 在第一寻址操作中,通过向每个数据存储单元施加具有相同极化的有源脉冲并记录输出电荷响应来读取一个或多个数据存储单元。 基于此,随后的第二寻址操作中的输出数据被复制到数据存储装置的另一段中的预定数据存储单元上,该段根据其先前的寻址历史进行选择。