公开(公告)号：US07425166B2

公开(公告)日：2008-09-16

申请号：US11589535

申请日：2006-10-30

申请人： Ronald Lee Burt ,  Stephan Lvovich Logunov ,  Robert Stephen Wagner ,  Aiyu Zhang

发明人： Ronald Lee Burt ,  Stephan Lvovich Logunov ,  Robert Stephen Wagner ,  Aiyu Zhang

IPC分类号： H01J9/00 ,  H01J9/24

CPC分类号： H01L51/5246 ,  H01L51/56

摘要： A method of sealing a plurality of frame-like frit walls disposed between two substrates. The frit walls are arranged in rows and columns and divided into groups, each group being sealed by a separate laser beam. Several strategies are disclosed for the order in which the frit walls are heated and sealed by a laser beam to optimize the efficiency of the sealing process.

摘要翻译： 一种密封设置在两个基板之间的多个框状玻璃料壁的方法。 玻璃料壁以行和列排列并分成组，每组由单独的激光束密封。 公开了几种策略，其中玻璃料壁被激光束加热和密封，以优化密封过程的效率。

公开(公告)号：US20080070340A1

公开(公告)日：2008-03-20

申请号：US11520958

申请日：2006-09-14

申请人： Nicholas Francis Borrelli ,  Michael Donavon Brady ,  Ronald Lee Burt ,  Kishor Purushottam Gadkaree

发明人： Nicholas Francis Borrelli ,  Michael Donavon Brady ,  Ronald Lee Burt ,  Kishor Purushottam Gadkaree

IPC分类号： H01L21/00

CPC分类号： H01L27/14692 ,  H01L21/76254 ,  H01L27/14618 ,  H01L27/1464 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods related to an image sensor of one or more embodiments include subjecting a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of semiconductor film on the donor semiconductor wafer, forming an anodic bond between the exfoliation layer and an insulator substrate by means of electrolysis; separating the exfoliation layer from the donor semiconductor wafer to transfer the exfoliation layer to the insulator substrate; and creating a plurality of image sensor features proximate to the exfoliation layer. Forming the anodic bonding by electrolysis may include the application of heat, pressure and voltage to the insulator structure and the exfoliation layer attached to the donor semiconductor wafer. Image sensor devices include an insulator structure, a semiconductor film, an anodic bond between them, and a plurality of image sensor features. The semiconductor film preferably comprises an exfoliation layer of a substantially single-crystal donor semiconductor wafer.

摘要翻译： 与一个或多个实施例的图像传感器相关的系统和方法包括使施主半导体晶片进行离子注入工艺以在施主半导体晶片上形成半导体膜的剥离层，在剥离层和绝缘体基板之间形成阳极结合 通过电解; 将剥离层与施主半导体晶片分离以将剥离层转移到绝缘体基板; 以及创建靠近剥离层的多个图像传感器特征。 通过电解形成阳极结合可以包括向绝缘体结构施加热，压力和电压，以及附着到施主半导体晶片的剥离层。 图像传感器装置包括绝缘体结构，半导体膜，它们之间的阳极结合以及多个图像传感器特征。 半导体膜优选包括基本上单晶施主半导体晶片的剥离层。