公开(公告)号：US08994068B2

公开(公告)日：2015-03-31

申请号：US13599244

申请日：2012-08-30

申请人： Rouying Zhan ,  Chai E Gill ,  Changsoo Hong

发明人： Rouying Zhan ,  Chai E Gill ,  Changsoo Hong

IPC分类号： H01L29/66 ,  H01L23/62 ,  H01L27/02 ,  H01L21/425 ,  H01L29/87

CPC分类号： H01L29/87 ,  H01L27/0262

摘要： An electrostatic discharge protection clamp adapted to limit a voltage appearing across protected terminals of an integrated circuit to which the electrostatic discharge protection clamp is coupled is presented. The electrostatic discharge protection clamp includes a substrate, and a first electrostatic discharge protection device formed over the substrate. The first electrostatic discharge protection device includes a buried layer formed over the substrate, the buried layer having a first conductivity type and defining an opening located over a region of the substrate, a first transistor formed over the opening of the buried layer, the first transistor having an emitter coupled to a first cathode terminal of the electrostatic discharge protection clamp, and a second transistor formed over the buried layer, the second transistor having an emitter coupled to a first anode terminal of the electrostatic discharge protection clamp.

摘要翻译： 本发明提供了一种静电放电保护钳，其适用于限制出现在静电放电保护钳耦合到的集成电路的受保护端子上的电压。 静电放电保护夹具包括衬底和形成在衬底上的第一静电放电保护器件。 第一静电放电保护器件包括形成在衬底上的掩埋层，所述掩埋层具有第一导电类型并且限定位于衬底的区域上方的开口，形成在掩埋层的开口上的第一晶体管，第一晶体管 具有耦合到所述静电放电保护钳位件的第一阴极端子的发射极和形成在所述掩埋层上的第二晶体管，所述第二晶体管具有耦合到所述静电放电保护钳位件的第一阳极端子的发射极。