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1.发明授权Integrated circuit memory device responsive to word line/bit line short-circuit 失效集成电路存储器件响应于字线/位线短路公开(公告)号：US07697354B2
公开(公告)日：2010-04-13
申请号：US11755101
申请日：2007-05-30
IPC分类号： G11C29/00
CPC分类号： G11C7/12 , G11C11/4085 , G11C11/4094 , G11C29/02 , G11C29/025 , G11C29/83
摘要： An integrated circuit memory device includes a memory array with associated word lines and bit lines. A switching arrangement is connected between a word line and a first voltage source that selectively connects the word line to the first voltage source, and also is responsive to a short-circuit between the word line and the bit line.
摘要翻译： 集成电路存储器件包括具有相关联的字线和位线的存储器阵列。 开关装置连接在字线和选择性地将字线连接到第一电压源的第一电压源之间，并且还响应于字线和位线之间的短路。
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2.发明申请CURRENT REDUCTION WITH WORDLINE BIT LINE SHORT-CIRCUITS IN DRAMS AND DRAM DERIVATIVES 失效使用WORDLINE位线短路电流在DRAMS和DRAM衍生电路中减少电流公开(公告)号：US20080298149A1
公开(公告)日：2008-12-04
申请号：US11755101
申请日：2007-05-30
CPC分类号： G11C7/12 , G11C11/4085 , G11C11/4094 , G11C29/02 , G11C29/025 , G11C29/83
摘要： An integrated circuit memory device includes a memory array with associated word lines and bit lines. A switching arrangement is connected between a word line and a first voltage source that selectively connects the word line to the first voltage source, and also is responsive to a short-circuit between the word line and the bit line.
摘要翻译： 集成电路存储器件包括具有相关联的字线和位线的存储器阵列。 开关装置连接在字线和选择性地将字线连接到第一电压源的第一电压源之间，并且还响应于字线和位线之间的短路。
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