摘要:
Provided is an organic light-emitting device including a first electrode, a second electrode disposed opposite to the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron-transporting layer disposed between the emission layer and the second electrode. The electron-transporting layer includes a first electron-transporting material and a second electron-transporting material. The lowest unoccupied molecular orbital (LUMO) energy level of the first electron-transporting material (EL1) and the lowest unoccupied molecular orbital (LUMO) energy level of the second electron-transporting material (EL2) satisfy the equation 0.1 eV≦|EL1−EL2|≦0.3 eV.
摘要:
An organic light emitting device, and a manufacturing method of the same, in which in a light emitting layer, an electron trap material is introduced so as to improve a light emitting property and an operating characteristic and to prolong a life span.
摘要:
An organic light emitting device, and a manufacturing method of the same, in which in a light emitting layer, an electron trap material is introduced so as to improve a light emitting property and an operating characteristic and to prolong a life span.
摘要:
Provided is an organic light-emitting device including a first electrode, a second electrode disposed opposite to the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron-transporting layer disposed between the emission layer and the second electrode. The electron-transporting layer includes a first electron-transporting material and a second electron-transporting material. The lowest unoccupied molecular orbital (LUMO) energy level of the first electron-transporting material (EL1) and the lowest unoccupied molecular orbital (LUMO) energy level of the second electron-transporting material (EL2) satisfy the equation 0.1 eV≦|EL1−EL2|≦0.3 eV.
摘要:
An organic light emitting diode (OLED) display includes a substrate, a thin film transistor formed on the substrate, a first electrode formed on the thin film transistor and electrically connected to the thin film transistor, a hole injection layer (HIL) formed on the first electrode, a hole transport layer (HTL) formed on the hole injection layer (HIL), an emission layer formed on the HTL, an electron transport layer (ETL) formed on the emission layer, a first buffer layer located on the ETL, and a second electrode formed on the first buffer layer.