公开(公告)号：US20160321997A1

公开(公告)日：2016-11-03

申请号：US15205892

申请日：2016-07-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Cheol Yun JEONG ,  Jong Hyun CHOI

IPC: G09G3/3258 ,  H01L51/56 ,  H01L27/32 ,  G09G3/3233 ,  G09G3/3275

CPC classification number: G09G3/3258 ,  G09G3/3233 ,  G09G3/3275 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2320/0233 ,  G09G2320/0238 ,  G09G2320/045 ,  G09G2320/0626 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78696 ,  H01L51/56 ,  H01L2227/323

Abstract: An organic light emitting diode display includes a semiconductor pattern which includes a plurality of channel regions. A first gate insulating layer is on the semiconductor pattern, a first gate conductive layer is on the first gate insulating layer, a second gate insulating layer is on the first gate conductive layer, and a second gate conductive layer is on the second gate insulating layer. The channel regions include a first channel region that overlaps the first gate conductive layer and a second channel region that does not overlap the first gate conductive layer. The first channel region and the second channel region have different doping concentrations.

Abstract translation: 有机发光二极管显示器包括包括多个通道区域的半导体图案。 第一栅极绝缘层位于半导体图案上，第一栅极导电层位于第一栅极绝缘层上，第二栅极绝缘层位于第一栅极导电层上，第二栅极导电层位于第二栅极绝缘层上 。 沟道区包括与第一栅极导电层重叠的第一沟道区和不与第一栅极导电层重叠的第二沟道区。 第一沟道区和第二沟道区具有不同的掺杂浓度。

公开(公告)号：US20160012775A1

公开(公告)日：2016-01-14

申请号：US14542900

申请日：2014-11-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Cheol Yun JEONG ,  Jong Hyun CHOI

IPC: G09G3/32 ,  H01L51/56 ,  H01L27/32

CPC classification number: G09G3/3258 ,  G09G3/3233 ,  G09G3/3275 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2320/0233 ,  G09G2320/0238 ,  G09G2320/045 ,  G09G2320/0626 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78696 ,  H01L51/56 ,  H01L2227/323

Abstract: An organic light emitting diode display includes a semiconductor pattern which includes a plurality of channel regions. A first gate insulating layer is on the semiconductor pattern, a first gate conductive layer is on the first gate insulating layer, a second gate insulating layer is on the first gate conductive layer, and a second gate conductive layer is on the second gate insulating layer. The channel regions include a first channel region that overlaps the first gate conductive layer and a second channel region that does not overlap the first gate conductive layer. The first channel region and the second channel region have different doping concentrations.