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公开(公告)号：US20210296417A1
公开(公告)日：2021-09-23
申请号：US17127566
申请日：2020-12-18
发明人： Chul Min BAE , Ju Hyun LEE , Ji Hye HAN , Gyung Min BAEK , Shin Il CHOI
摘要： A display device according to an embodiment includes: a substrate; a first compensation layer on the substrate; a buffer layer on the first compensation layer; a semiconductor layer on the buffer layer; a data wire including a source electrode and a drain electrode connected to the semiconductor layer; and a light-emitting device connected to the drain electrode, wherein the first compensation layer includes a SiNx, and a ratio of a N—H bond and a Si—H bond of the first compensation layer is 10 to 60.
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公开(公告)号：US20210359136A1
公开(公告)日：2021-11-18
申请号：US17149164
申请日：2021-01-14
发明人： Ji Hye HAN , Jung Yun JO , Chul Min BAE
IPC分类号： H01L29/786 , H01L27/32 , H01L27/12
摘要： A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.
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公开(公告)号：US20200233136A1
公开(公告)日：2020-07-23
申请号：US16714763
申请日：2019-12-15
发明人： Chang Ok KIM , Chul Min BAE , Ji Hye HAN , Tae Wook KANG , Yong Seok KIM , Shin Il CHOI
IPC分类号： F21V8/00
摘要： A light unit including: a light source; and an optical member that transmits and converts light emitted from the light source, wherein the optical member includes: a light guide; a low refractive index layer that is disposed on the light guide and has a lower refractive index than that of the light guide; a first capping layer that is disposed on the low refractive index layer; and a wavelength conversion layer that is disposed on the first capping layer and includes quantum dots, and the light guide includes a transparent metal oxide.
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公开(公告)号：US20220140262A1
公开(公告)日：2022-05-05
申请号：US17404004
申请日：2021-08-17
发明人： Chul Min BAE , Eun Jin KWAK , Jin Suk LEE , Jung Yun JO , Ji Hye HAN , Young In HWANG
IPC分类号： H01L51/00 , H01L27/32 , H01L51/52 , H01L51/56 , C23C16/40 , C23C16/34 , C23C14/18 , C23C28/00
摘要： A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.
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公开(公告)号：US20210104588A1
公开(公告)日：2021-04-08
申请号：US16879291
申请日：2020-05-20
发明人： Ji Hye HAN , Chul Min BAE , Chang Ok KIM
IPC分类号： H01L27/32 , H01L51/56 , H01L29/786
摘要： A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.
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公开(公告)号：US20230197853A1
公开(公告)日：2023-06-22
申请号：US18109301
申请日：2023-02-14
发明人： Ji Hye HAN , Jung Yun JO , Chul Min BAE
IPC分类号： H01L29/786 , H01L27/12 , H10K59/121
CPC分类号： H01L29/78606 , H01L27/1225 , H10K59/1213
摘要： A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.
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公开(公告)号：US20210050536A1
公开(公告)日：2021-02-18
申请号：US16906866
申请日：2020-06-19
发明人： Yeoung Keol WOO , Yung Bin CHUNG , Chul Min BAE , Ji Hye HAN , Eun Jin KWAK
摘要： A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.
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公开(公告)号：US20190206969A1
公开(公告)日：2019-07-04
申请号：US16143934
申请日：2018-09-27
发明人： JIN HO HWANG , Byeong-Beom KIM , Chul Min BAE , Woo-Seok JEON
IPC分类号： H01L27/32 , H01L51/52 , H01L51/50 , G09G3/3291 , G09G3/3266
摘要： A display device includes: a substrate; a semiconductor on the substrate and including a driving channel; a first insulating layer on the semiconductor; a driving gate electrode on the first insulating layer and overlapping the driving channel; a second insulating layer on the driving gate electrode and the first insulating layer and including first and second dielectric constant layers, the second dielectric constant layer having a dielectric constant that is greater than that of the first dielectric constant layer; a storage electrode on the second insulating layer; a passivation layer covering the storage electrode and the second insulating layer; a pixel electrode on the passivation layer; an emission member on the pixel electrode; and a common electrode on the emission member, wherein the storage electrode overlaps the driving gate electrode, and wherein the storage electrode, the driving gate electrode and the second insulating layer therebetween form a storage capacitor.
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公开(公告)号：US20240147768A1
公开(公告)日：2024-05-02
申请号：US18334452
申请日：2023-06-14
发明人： Ji Hye HAN , Hyun Eok SHIN , Chul Min BAE
IPC分类号： H10K59/122 , H10K59/38 , H10K59/80
CPC分类号： H10K59/122 , H10K59/38 , H10K59/873 , H10K59/878 , H10K59/879 , H10K59/8792
摘要： A pixel includes: a via layer disposed on a substrate; a first electrode disposed on the via layer; a pixel defining layer disposed on the first electrode, the pixel defining layer including an opening exposing a portion of the first electrode; an emission layer disposed on the portion of the first electrode and the pixel defining layer; and a second electrode disposed on the emission layer. The first electrode includes a first layer disposed on the via layer and a second layer disposed between the first layer and the pixel defining layer. The first layer includes a plurality of sub-insulating layers, each of the plurality of sub-insulating layers including a first sub-layer and a second sub-layer that are sequentially stacked. The first sub-layer and the second sub-layer have different refractive indices.
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公开(公告)号：US20230086507A1
公开(公告)日：2023-03-23
申请号：US17991396
申请日：2022-11-21
发明人： Ji Hye HAN , Chul Min BAE , Chang Ok KIM
IPC分类号： H01L27/32 , H01L51/56 , H01L29/786
摘要： A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.
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