DISPLAY DEVICE
    2.
    发明申请

    公开(公告)号:US20210175311A1

    公开(公告)日:2021-06-10

    申请号:US17085288

    申请日:2020-10-30

    Abstract: A display device includes a pixel circuit disposed on a substrate, and a display element on the pixel circuit. The pixel circuit includes a first thin-film transistor comprising a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, a second thin-film transistor comprising a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer being connected to the first semiconductor layer and the first gate electrode, a first shielding layer overlapping the second semiconductor layer, and a second shielding layer overlapping the second semiconductor layer and stacked on the first shielding layer.

    DISPLAY APPARATUS
    3.
    发明申请

    公开(公告)号:US20210110765A1

    公开(公告)日:2021-04-15

    申请号:US16830899

    申请日:2020-03-26

    Abstract: A display apparatus includes a first data line extending from a first peripheral area into a display area, a second data line extending from a second peripheral area into the display area, a pixel electrode, a second input line disposed in the first peripheral area, and a connecting line having a first end electrically connected to the second data line in the second peripheral area and a second end electrically connected to the second input line in the first peripheral area. The connecting line passes through the display area by extending over the first data line while not contacting the first data line, and at least a portion of the connecting line and the pixel electrode include a same material.

    DISPLAY DEVICE
    4.
    发明申请

    公开(公告)号:US20250143103A1

    公开(公告)日:2025-05-01

    申请号:US19010589

    申请日:2025-01-06

    Abstract: A display device includes a pixel circuit disposed on a substrate, and a display element on the pixel circuit. The pixel circuit includes a first thin-film transistor comprising a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, a second thin-film transistor comprising a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer being connected to the first semiconductor layer and the first gate electrode, a first shielding layer overlapping the second semiconductor layer, and a second shielding layer overlapping the second semiconductor layer and stacked on the first shielding layer.

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