公开(公告)号：US20150108481A1

公开(公告)日：2015-04-23

申请号：US14452261

申请日：2014-08-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YOON-HO KHANG ,  DONG-JO KIM ,  SU-HYOUNG KANG ,  YONG-SU LEE

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/42

CPC classification number: H01L29/7869 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78696

Abstract: A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive material and overlaps with the bottom gate electrode. A boundary of the bottom gate electrode and a boundary of the top gate electrode are coincident with each other in a cross-sectional view. The active pattern includes a source portion, a drain portion and a channel portion disposed between the source portion and the drain portion. The channel portion overlaps with the bottom gate electrode and the top gate electrode.

Abstract translation: 薄膜晶体管包括底栅电极，顶栅电极和有源图案。 顶栅电极包括透明导电材料并与底栅电极重叠。 底栅电极的边界和顶栅电极的边界在横截面图中彼此重合。 有源图案包括源极部分，漏极部分和设置在源极部分和漏极部分之间的沟道部分。 沟道部分与底栅电极和顶栅电极重叠。