公开(公告)号：US20150123099A1

公开(公告)日：2015-05-07

申请号：US14462863

申请日：2014-08-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Young Jun SHIN ,  Jeehoon KIM ,  Sehun PARK ,  Jaehwan OH ,  Guanghai KIM ,  Byoungki KIM ,  Wonkyu LEE

IPC: H01L27/32 ,  G02F1/1362 ,  H01L29/423 ,  H01L23/36 ,  H01L29/417

CPC classification number: G02F1/136213 ,  G02F1/133385 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L23/3677 ,  H01L27/0211 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor includes a semiconductor pattern on a base substrate, the semiconductor pattern including an input area, an output area, and a channel area between the input area and the output area, a first insulating layer covering the semiconductor pattern, a control electrode on the first insulating layer, the control electrode overlapping the channel area, a second insulating layer covering the control electrode, an input electrode connected to the input area, an output electrode connected to the output area, and a heat discharge electrode on the second insulating layer, the heat discharge electrode being connected to the control electrode.

Abstract translation: 薄膜晶体管包括在基底基板上的半导体图案，所述半导体图案包括输入区域，输出区域和输入区域与输出区域之间的沟道区域，覆盖半导体图案的第一绝缘层，控制电极 在所述第一绝缘层上，所述控制电极与所述沟道区域重叠，覆盖所述控制电极的第二绝缘层，连接到所述输入区域的输入电极，连接到所述输出区域的输出电极，以及所述第二绝缘层上的放热电极 所述放热电极与所述控制电极连接。