公开(公告)号：US20140239295A1

公开(公告)日：2014-08-28

申请号：US14190722

申请日：2014-02-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Woo PARK ,  Dong-Jo Kim ,  Ju-Ok Park ,  In-Sung Sohn ,  Sang-Won Yoon ,  Gun-Hyo Lee ,  Yong-Jin Lee ,  Yoon-Gyu Lee ,  Do-Hyun Kim ,  Woo-Seok Jeon

IPC: H01L29/786 ,  C23C14/34

CPC classification number: H01L29/7869 ,  C23C14/3414

Abstract: Provided are a zinc oxide-based sputtering target, a method of preparing the same, and a thin film transistor including a barrier layer deposited by the zinc oxide-based sputtering target. The zinc oxide-based sputtering target includes a sintered body that is composed of zinc oxide in which indium oxide is doped in a range from about 1% w/w to about 50% w/w. A backing plate is coupled to a back of the sintered body. The backing plate supports the sintered body.

Abstract translation: 提供了一种基于氧化锌的溅射靶，其制备方法和包含由氧化锌基溅射靶沉积的势垒层的薄膜晶体管。 基于氧化锌的溅射靶包括由氧化锌组成的烧结体，其中氧化铟掺杂在约1％w / w至约50％w / w的范围内。 背板联接到烧结体的背面。 背板支撑烧结体。