公开(公告)号：US20190115559A1

公开(公告)日：2019-04-18

申请号：US15976423

申请日：2018-05-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JUN CHUN ,  JIN-SU BYUN ,  BO GEON JEON ,  JUN GI KIM ,  JEONG MIN PARK ,  YANG-HO JUNG ,  SEON HWA CHOI

IPC: H01L51/52 ,  H01L33/36 ,  H01L27/32

Abstract: A light emitting device includes a substrate. A thin film transistor is disposed on the substrate. A first electrode is connected to the thin film transistor. A second electrode at least partially overlaps the first electrode. A first partition wall is disposed between the first electrode and the second electrode. An insulating layer is disposed between the thin film transistor and the first electrode. The insulating layer includes a first part having a first thickness and a second part having a second thickness that is different than the first thickness. The second part of the insulating layer at least partially overlaps the first partition wall.