公开(公告)号：US20140145177A1

公开(公告)日：2014-05-29

申请号：US13828990

申请日：2013-03-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji-Seon LEE ,  Dong-Jo KIM ,  Yoon-Ho KHANG ,  Yong-Su LEE ,  Jong-Chan LEE

IPC: H01L33/08

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.

Abstract translation: 薄膜晶体管基板包括以下元件：基底基板，设置在基底基板上的数据线，与数据线接触的源电极，与源电极间隔开的漏电极，设置在源极和漏极之间的沟道 电连接到漏电极的像素电极，设置在沟道上的栅极绝缘图案，以及设置在栅极绝缘图案上的栅电极。