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公开(公告)号:US20210135039A1
公开(公告)日:2021-05-06
申请号:US16887290
申请日:2020-05-29
发明人: WOO-SEOK JEON , KWANG HYUN KIM , HEON SIK HA
IPC分类号: H01L31/18 , H01L31/0224 , H01L27/146
摘要: A method of manufacturing a photo sensor includes forming a first conductive layer on a substrate, the first conductive layer including a metal layer and a transparent conductive oxide layer formed on the metal layer, forming a photoconductive layer on the first conductive layer, forming a second conductive layer on the photoconductive layer, forming a first photoresist pattern on the second conductive layer, etching the second conductive layer using the first photoresist pattern as an etch mask to form a second electrode, deforming the first photoresist pattern to form a second photoresist pattern, and etching the photoconductive layer and the first conductive layer using the second photoresist pattern to form a photoconductive pattern and a first electrode, respectively.