公开(公告)号：US20200219991A1

公开(公告)日：2020-07-09

申请号：US16824339

申请日：2020-03-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JAYBUM KIM ,  SERYEONG KIM ,  JUNHYUNG LIM ,  TAESANG KIM

IPC: H01L29/66 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L27/146 ,  H01L29/786

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern includes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

公开(公告)号：US20220181465A1

公开(公告)日：2022-06-09

申请号：US17652843

申请日：2022-02-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JAYBUM KIM ,  SERYEONG KIM ,  JUNHYUNG LIM ,  TAESANG KIM

IPC: H01L29/66 ,  H01L27/32 ,  H01L29/786 ,  H01L27/146 ,  H01L29/04 ,  H01L27/12

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.