公开(公告)号：US20240414915A1

公开(公告)日：2024-12-12

申请号：US18403487

申请日：2024-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunuk Jeon ,  Dong Young Kim ,  Byeongheon Min

IPC: H10B43/27 ,  H10B43/40

Abstract: Disclosed are three-dimensional semiconductor memory devices and electronic systems. The three-dimensional semiconductor memory device comprises stack structures that include interlayer dielectric layers and gate electrodes that are alternately stacked on a substrate, vertical channel structures that penetrate the stack structures, and a separation structure that runs in a first direction across between the stack structures. The separation structure includes a first portion that extends in a vertical direction from the substrate, and a second portion on the first portion and including a material different from a material of the first portion. A top surface of the second portion is at a level the same as that of top surfaces of the vertical channel structures.