公开(公告)号：US20140011350A1

公开(公告)日：2014-01-09

申请号：US13937401

申请日：2013-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHOONGKEE SEONG ,  KYUNGHYUN KIM ,  KIJONG PARK ,  JIN-I LEE

IPC: H01L29/423

CPC classification number: H01L29/42328

Abstract: A method of manufacturing a semiconductor device, the method including forming a first gate electrode layer including a semiconductor material on a substrate; performing an annealing process on the first gate electrode layer; performing a dry cleaning process on a surface of the first gate electrode layer after the annealing process; and forming a second gate electrode layer on the first gate electrode layer after the dry cleaning process.

Abstract translation: 一种制造半导体器件的方法，所述方法包括在衬底上形成包括半导体材料的第一栅电极层; 对所述第一栅电极层进行退火处理; 在退火处理之后在第一栅电极层的表面上进行干洗处理; 以及在所述干式清洗处理之后，在所述第一栅极电极层上形成第二栅极电极层。