公开(公告)号：US20240055303A1

公开(公告)日：2024-02-15

申请号：US18118175

申请日：2023-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Woo KIM ,  Min Hyung KANG ,  Min Seob KIM ,  Chan Geun AHN

IPC: H01L21/66 ,  H01L21/8234

CPC classification number: H01L22/14 ,  H01L21/823431 ,  H01L21/823418

Abstract: A fabricating method for a test element group is provided. The fabricating method for a test element group includes fabricating test areas generated in a scribe lane area, wherein fabricating of the test areas includes forming a plurality of fins protruding in a first direction on a substrate, covering at least some of the plurality of fins with a masking material, and performing selective epitaxial growth by injecting a gas onto the plurality of fins. The gas is not injected onto the at least some of the plurality of fins that are covered with the masking material, such that the epitaxial growth does not occur on the fins covered with the masking material.