公开(公告)号：US20230402503A1

公开(公告)日：2023-12-14

申请号：US18182507

申请日：2023-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Lim PARK ,  Woo Seop LIM ,  Ji Min CHAE ,  Chang Mu AN ,  Jae Soon LIM

IPC: H10B12/00

CPC classification number: H01L28/91 ,  H10B12/315 ,  H10B12/033

Abstract: Disclosed is a semiconductor device. The semiconductor device includes a lower electrode disposed on a substrate; a first lower interfacial film disposed on the lower electrode; a dielectric film disposed on the first lower interfacial film; a first upper interfacial film disposed on the dielectric film; and an upper electrode disposed on the first upper interfacial film, wherein each of the first lower interfacial film and the first upper interfacial film is a conductive single film, and the first lower interfacial film and the first upper interfacial film include the same metal element, wherein electronegativity of the metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than electronegativity of a metal element included in the dielectric film.

公开(公告)号：US20210296429A1

公开(公告)日：2021-09-23

申请号：US17342610

申请日：2021-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Lim PARK ,  Se Hyoung AHN ,  Sang Yeol KANG ,  Chang Mu AN ,  Kyoo Ho JUNG

IPC: H01L49/02 ,  H01L27/11507 ,  H01L27/108

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.