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1.
公开(公告)号:US20200266264A1
公开(公告)日:2020-08-20
申请号:US16541883
申请日:2019-08-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungjun KIM , Doh Won JUNG , Chan KWAK , Ki Hong KIM , Daejin YANG , Chang Soo LEE
IPC: H01L49/02
Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.
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公开(公告)号:US20210134941A1
公开(公告)日:2021-05-06
申请号:US17148787
申请日:2021-01-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungjun KIM , Doh Won JUNG , Chan KWAK , Ki Hong KIM , Daejin YANG , Chang Soo LEE
IPC: H01L49/02
Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.
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