公开(公告)号：US20220223702A1

公开(公告)日：2022-07-14

申请号：US17707036

申请日：2022-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-yeon LEE ,  Jin-wook LEE ,  Min-chan GWAK ,  Kye-Hyun BAEK ,  Hong-bae PARK

IPC: H01L29/417 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

Abstract: An integrated circuit device including a substrate; a fin-type active region protruding from the substrate; a gate line intersecting the fin-type active region and covering a top surface and side walls thereof; a gate insulating capping layer covering the gate line; source/drain regions at sides of the gate line on the fin-type active region; first conductive plugs connected to the source/drain regions; a hard mask layer covering the first conductive plugs; and a second conductive plug between the first conductive plugs, the second conductive plug connected to the gate line by passing through the gate insulating capping layer and having a top surface higher than the top surface of each first conductive plug, wherein the hard mask layer protrudes from the first conductive plugs and toward the second conductive plug so that a portion of the hard mask layer overhangs from an edge of the first conductive plugs.

公开(公告)号：US20200035796A1

公开(公告)日：2020-01-30

申请号：US16404857

申请日：2019-05-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-yeon LEE ,  Jin-wook LEE ,  Min-chan GWAK ,  Kye-Hyun BAEK ,  Hong-bae PARK

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/78 ,  H01L21/8234

Abstract: An integrated circuit device including a substrate; a fin-type active region protruding from the substrate; a gate line intersecting the fin-type active region and covering a top surface and side walls thereof; a gate insulating capping layer covering the gate line; source/drain regions at sides of the gate line on the fin-type active region; first conductive plugs connected to the source/drain regions; a hard mask layer covering the first conductive plugs; and a second conductive plug between the first conductive plugs, the second conductive plug connected to the gate line by passing through the gate insulating capping layer and having a top surface higher than the top surface of each first conductive plug, wherein the hard mask layer protrudes from the first conductive plugs and toward the second conductive plug so that a portion of the hard mask layer overhangs from an edge of the first conductive plugs.