公开(公告)号：US20210057445A1

公开(公告)日：2021-02-25

申请号：US16910199

申请日：2020-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunggil KIM ,  Sungjin KIM ,  Seulye KIM ,  Junghwan KIM ,  Chanhyoung KIM

IPC: H01L27/11582 ,  H01L29/10

Abstract: A three-dimensional semiconductor device including a conductive layer disposed on a substrate and including a first conductivity-type impurity; an insulating base layer disposed on the conductive layer; a stack structure including a lower insulating film disposed on the insulating base layer, and a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked on the lower insulating film, wherein the insulating base layer includes a high dielectric material; a vertical structure including a vertical channel layer penetrating through the stack structure and a vertical insulating layer disposed between the vertical channel layer and the plurality of gate electrodes, the vertical structure having an extended area extending in a width direction in the insulating base layer; and an isolation structure penetrating through the stack structure, the insulating base layer and the conductive layer, and extending in a direction parallel to an upper surface of the substrate, wherein the conductive layer has an extension portion extending along a surface of the vertical channel layer in the extended area of the vertical structure.