公开(公告)号：US20140357035A1

公开(公告)日：2014-12-04

申请号：US14460081

申请日：2014-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shigenobu MAEDA ,  Hyun-pil NOH ,  Choong-ho LEE ,  Seog-heon HAM

IPC: H01L21/8236 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/8236 ,  H01L21/77 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823462 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823857 ,  H01L25/00 ,  H01L27/00 ,  H01L27/0883 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

Abstract translation: 提供了包括高压晶体管和低压晶体管的半导体器件及其制造方法。 半导体器件包括：包括高电压区域和低电压区域的半导体衬底; 形成在高电压区域中并包括第一有源区，第一源极/漏极区，第一栅极绝缘层和第一栅电极的高压晶体管; 以及形成在所述低电压区域中并包括第二有源区，第二源极/漏极区，第二栅极绝缘层和第二栅电极的低电压晶体管。 第二源极/漏极区域的厚度小于第一源极/漏极区域的厚度。