公开(公告)号：US20140146589A1

公开(公告)日：2014-05-29

申请号：US13832996

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHULSUNG PARK ,  DONGSOO JUN ,  JOOSUN CHOI

IPC: G11C5/02

CPC classification number: G11C11/4076 ,  G06F12/0893 ,  G06F2212/3042 ,  G11C2207/2245

Abstract: A semiconductor memory device is provided which includes a dynamic random access memory including a memory cell array formed of dynamic random access memory cells; a cache memory formed at the same chip as the dynamic random access memory and configured to communicate with a processor or an external device; and a controller connected with the dynamic random access memory and the cache memory in the same chip and configured to control a dynamic random access function and a cache function.

Abstract translation: 提供一种半导体存储器件，其包括动态随机存取存储器，其包括由动态随机存取存储器单元形成的存储单元阵列; 高速缓冲存储器，其形成在与所述动态随机存取存储器相同的芯片处，并被配置为与处理器或外部设备进行通信; 以及与同一芯片中的动态随机存取存储器和高速缓冲存储器连接的控制器，用于控制动态随机存取功能和高速缓存功能。