公开(公告)号：US20240079437A1

公开(公告)日：2024-03-07

申请号：US18505392

申请日：2023-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KangMook LIM ,  Dae Hoon KIM ,  Seung Sik KIM ,  Ji-Youn SONG ,  Jae Hoon JEON ,  Dong Seok CHO

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

公开(公告)号：US20240178255A1

公开(公告)日：2024-05-30

申请号：US18373353

申请日：2023-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Hoon KIM ,  Yong Jun KIM

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/08 ,  H01L24/80 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: An image sensor includes a first substrate having a photoelectric conversion element. A first gate electrode is on a first side of the first substrate. A floating diffusion region is in the first substrate. A first wiring structure is on the first side and includes a first wiring layer and a first bonding pad. A second substrate has a third side that includes second and third gate electrodes. An impurity region is in the second substrate. A second wiring structure is on the third side and includes a second wiring layer and a second bonding pad directly contacting the first bonding pad. A fourth gate electrode is on a fourth side of the second substrate. A third wiring structure is on the fourth side and includes a third wiring layer. The floating diffusion region is connected to the impurity region through the first wiring structure and the second wiring structure.

公开(公告)号：US20200251512A1

公开(公告)日：2020-08-06

申请号：US16551898

申请日：2019-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Mo IM ,  Seung Sik KIM ,  Ji Yoon KIM ,  Dae Hoon KIM ,  Min Woong SEO

IPC: H01L27/146

Abstract: A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.