公开(公告)号：US20220246200A1

公开(公告)日：2022-08-04

申请号：US17474666

申请日：2021-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsu KIM ,  Namhyung KIM ,  Daejeong KIM ,  Dohan KIM ,  Chanik PARK ,  Deokho SEO ,  Wonjae SHIN ,  Changmin LEE ,  Ilguy JUNG ,  Insu CHOI

IPC: G11C11/406

Abstract: Provided are a memory device skipping a refresh operation and an operating method thereof. The memory device includes a memory cell array including N rows; a refresh controller configured to control a refresh operation for the N rows of the memory cell array based on a refresh command; and an access information storage circuit including a plurality of registers configured to store flag information corresponding to each of the N rows, wherein a first value indicates rows that have been accessed, and a second value indicates rows that have not been accessed. The refresh controller is further configured to control whether the refresh operation is performed for a first row of the N rows at a refresh timing for the first row based on the flag information corresponding to the first row