公开(公告)号：US20250040270A1

公开(公告)日：2025-01-30

申请号：US18746917

申请日：2024-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daeuk JUNG ,  Youngrae KIM ,  Jeongjin CHO ,  Sachoun PARK ,  Junghyung PYO

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a plurality of photodiodes in the substrate, a pixel separating pattern in the substrate separating the plurality of photodiodes, a first active pattern in the substrate at least partially overlapping a first photodiode and a second photodiode from among the plurality of photodiodes, a selection gate on the first active pattern at least partially overlapping the first photodiode, and a source follower gate on the first active pattern at least partially overlapping the second photodiode. The first photodiode is adjacent to the second photodiode. The pixel separating pattern includes a first pixel separating pattern and a second pixel separating pattern disposed between the first photodiode and the second photodiode. The first pixel separating pattern is spaced from the second pixel separating pattern. The first active pattern includes a first extrinsic region disposed between the first pixel separating pattern and the second pixel separating pattern.