公开(公告)号：US20220397829A1

公开(公告)日：2022-12-15

申请号：US17719576

申请日：2022-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dahan Kang ,  Youngseok Kim

IPC: G03F7/20 ,  G05B19/418 ,  G05B19/401

Abstract: A method for monitoring a process variation index includes operations of: obtaining a target parameter to be monitored and a reference parameter used to increase goodness of fit among structural parameters predicted by measuring a structure in a specific location of a wafer; obtaining a reference parameter set in a reference model; and calculating a process variation index capable of confirming a structural change of the structure according to a change in process conditions using the structural parameter and the reference parameter.