公开(公告)号：US20230397404A1

公开(公告)日：2023-12-07

申请号：US18138311

申请日：2023-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungoo KANG ,  Dayeon NAM ,  Sungjoon YOON ,  Donggeon LEE

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033

Abstract: An integrated circuit device includes: a capacitor structure, wherein the capacitor structure includes: a lower electrode arranged on a substrate, wherein the lower electrode includes an electrode layer extending in a direction substantially perpendicular to an upper surface of the substrate, wherein the electrode layer includes niobium nitride; a supporter arranged on a sidewall of the lower electrode; a dielectric layer arranged on the lower electrode and the supporter; a first interface layer arranged between a sidewall of the lower electrode and the dielectric layer and between a top surface of the lower electrode and the dielectric layer, wherein the first interface layer includes a conductive metal nitride; and an upper electrode arranged on the dielectric layer, wherein the upper electrode covers the lower electrode and includes niobium nitride.