公开(公告)号：US20230101968A1

公开(公告)日：2023-03-30

申请号：US17827231

申请日：2022-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Woo RYOO ,  Da Hee YOON ,  Jung Hoon BYUN ,  Dong-Ryul LEE ,  Woo Yun LEE ,  Dong Chul IHM ,  Chung Sam JUN

IPC: G01J3/44 ,  G01N21/65 ,  G01N21/95

Abstract: A semiconductor device measuring device includes: a light generator which generates light; a polarizer which polarizes the light; a wafer stage including a first load port on which an undoped reference wafer is loaded, and a second load port on which a doped sample wafer is loaded, the wafer stage being movable to first and second positions at which the polarized light is incident on the reference wafer and the sample wafer, respectively; a spectroscope which collects first and second Raman spectral information of light reflected from the reference and sample wafers, respectively; a photodetector which detects first and second Raman scattering signals based on the first and second Raman spectral information, respectively; a spectrum corrector which corrects the second Raman scattering signal using the first Raman scattering signal; and a controller which calculates a concentration of the dopant of the sample wafer using the corrected scattering signal.