公开(公告)号：US20220271077A1

公开(公告)日：2022-08-25

申请号：US17668524

申请日：2022-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongchul LEE ,  Jinyoung KIM ,  Beomsuk LEE ,  Kwansik CHO ,  Hochul JI

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface. The first surface includes an element isolation trench. An element isolation layer is arranged inside the element isolation trench. The element isolation layer defines an active region. A gate electrode is arranged on the first surface of the semiconductor substrate. An interlayer insulating layer is arranged on the first surface of the semiconductor substrate and covers the gate electrode. A ground contact is configured to penetrate the element isolation layer and the interlayer insulating layer and contacts the semiconductor substrate. A color filter is arranged on the second surface of the semiconductor substrate.