公开(公告)号：US11152365B2

公开(公告)日：2021-10-19

申请号：US15966554

申请日：2018-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namho Jeon ,  Jin-Seong Lee ,  Hyun-jung Lee ,  Dongsoo Woo ,  Donggyu Heo ,  Jaeho Hong

IPC: H01L27/105 ,  H01L29/06 ,  H01L21/8238 ,  H01L21/8239 ,  H01L27/108

Abstract: Disclosed are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a device isolation layer defining active regions of a substrate, and gate lines buried in the substrate and extending across the active regions. Each of the gate lines includes a conductive layer, a liner layer disposed between and separating the conductive layer and the substrate, and a first work function adjusting layer disposed on the conductive layer and the liner layer. The first work function adjusting layer includes a first work function adjusting material. A work function of the first work function adjusting layer is less than those of the conductive layer and the liner layer.

公开(公告)号：US11189618B2

公开(公告)日：2021-11-30

申请号：US15966554

申请日：2018-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namho Jeon ,  Jin-Seong Lee ,  Hyun-jung Lee ,  Dongsoo Woo ,  Donggyu Heo ,  Jaeho Hong

IPC: H01L27/105 ,  H01L29/06 ,  H01L21/8238 ,  H01L21/8239 ,  H01L27/108

Abstract: Disclosed are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a device isolation layer defining active regions of a substrate, and gate lines buried in the substrate and extending across the active regions. Each of the gate lines includes a conductive layer, a liner layer disposed between and separating the conductive layer and the substrate, and a first work function adjusting layer disposed on the conductive layer and the liner layer. The first work function adjusting layer includes a first work function adjusting material. A work function of the first work function adjusting layer is less than those of the conductive layer and the liner layer.