公开(公告)号：US12284845B2

公开(公告)日：2025-04-22

申请号：US17711165

申请日：2022-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minkyun Kim ,  Donghyuk Joo ,  Inho Kim ,  Seungmi Son ,  Sungwook Lee

IPC: H10H20/841 ,  H10H20/821 ,  H10H20/832 ,  H10H20/833 ,  H10H20/857 ,  H10H20/01

Abstract: A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.