公开(公告)号：US12262133B2

公开(公告)日：2025-03-25

申请号：US18213032

申请日：2023-06-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghyun Yoon ,  Haneul Jung ,  Dongjae Han

IPC: H04N25/767 ,  H04N25/616 ,  H04N25/772

Abstract: A ramp signal generating device and an image sensor for decreasing the latency of a ramp signal are provided. The ramp signal generating device may include a first circuit configured to detect a capacitance of a parasitic capacitor, a second circuit configured to charge the parasitic capacitor with a first voltage, and a third circuit configured to receive the capacitance as an input to generate a load current causing the ramp signal with a predetermined slope.