公开(公告)号：US20200234772A1

公开(公告)日：2020-07-23

申请号：US16253938

申请日：2019-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： ELISHA HALPERIN ,  Evgeny BLAICHMAN ,  Amit BERMAN

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/08 ,  G11C16/34

Abstract: A method for determining an optimal threshold of a nonvolatile memory device, the method including: reading a page from a nonvolatile memory device with a default threshold and attempting to hard decode the page using the default threshold; reading the page two more times with a predetermined offset voltage when the hard decoding fails and attempting to soft decode the page using the default threshold; approximating an empirical distribution of successfully decoded bits with a Gaussian distribution for each level; finding an intersection of the Gaussian distributions; and setting the intersection as a new reading threshold and reading the page again with the new reading threshold.

公开(公告)号：US20210096751A1

公开(公告)日：2021-04-01

申请号：US16585186

申请日：2019-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： AMIT BERMAN ,  ELISHA HALPERIN ,  EVGENY BLAICHMAN

IPC: G06F3/06 ,  G06N3/04 ,  G06N3/08

Abstract: A memory system includes a memory device, and a memory controller including a processor and an internal memory. A computer program including a neural network is stored in the memory system. The processor executes the computer program to extract a voltage level from each of a plurality of memory cells connected to one string select line (SSL), in which the memory cells and the SSL are included in a memory block of the memory device, provide the voltage levels as input to the neural network, and perform noise cancellation on the SSL, using the neural network, by changing at least one of the voltage levels from a first voltage level to a second voltage level. The first voltage level is classified into a first cluster of memory cells, and the second voltage level is classified into a second cluster of memory cells different from the first cluster.