SEMICONDUCTOR MEMORY DEVICE
    1.
    发明公开

    公开(公告)号:US20230189504A1

    公开(公告)日:2023-06-15

    申请号:US17953401

    申请日:2022-09-27

    CPC classification number: H01L27/10814 H01L27/10823

    Abstract: A semiconductor memory device includes a landing pad on a substrate, a lower electrode on and connected to the landing pad, a dielectric layer on and extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode, the upper plate electrode including a first sub-plate electrode and a second sub-plate electrode doped with boron, a first concentration of the boron in the first sub-plate electrode being greater than a second concentration of the boron in the second sub-plate electrode.

    ELECTRONIC DEVICE AND CONTROL METHOD THEREFOR

    公开(公告)号:US20210192933A1

    公开(公告)日:2021-06-24

    申请号:US16074378

    申请日:2016-04-22

    Abstract: An electronic apparatus according to the present invention includes: a communicator configured to communicate with a plurality of electronic devices; and a controller configured to determine a second electronic device capable of displaying information of a user interface (UI) for controlling a first electronic device, among the plurality of electronic devices, based on at least one of information about the plurality of electronic devices and information about a user, in response to an event of the user which makes a request for controlling the first electronic device among the plurality of electronic devices, and control the information of the UI to be transmitted to the determined second electronic device.
    In such an electronic apparatus, states of a user and peripheral devices are determined to provide a UI optimized to control a device-to-be-controlled, thereby improving user convenience.

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