公开(公告)号：US20240164084A1

公开(公告)日：2024-05-16

申请号：US18236435

申请日：2023-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Do Keun LEE ,  Dong Wook KIM ,  Yang Doo KIM ,  Sang Wuk PARK ,  Min Kyu SUH ,  Geon Yeop LEE ,  Jung Pyo HONG

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/0335 ,  H10B12/34

Abstract: A semiconductor device includes: a substrate includes an active area; a first landing pad connected to the active area and disposed on the substrate; a second landing pad connected to the active area, and spaced apart from the first landing pad, wherein the second landing pad is disposed on the substrate; a first lower electrode disposed on the first landing pad and extending in a direction substantially perpendicular to the substrate; a second lower electrode disposed on the second landing pad and extending in the direction substantially perpendicular to the substrate; a dielectric layer extending along the first lower electrode and the second lower electrode; and an upper electrode disposed on the dielectric layer, wherein a first upper surface of the first landing pad is disposed below a second upper surface of the second landing pad with respect to a lower surface of the substrate.