公开(公告)号：US20250016993A1

公开(公告)日：2025-01-09

申请号：US18428207

申请日：2024-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Hwan JANG ,  Guifu YANG ,  Jinbum KIM ,  Sunguk JANG

IPC: H10B12/00

Abstract: A semiconductor device includes a substrate including a recess region; a bit line contact in the recess region; a bit line on the bit line contact, the bit line extending in a first direction; a first insulating pattern covering side surfaces of the bit line contact and an inner surface of the recess region; and a second insulating pattern on the first insulating pattern, wherein an oxygen density of the first insulating pattern is higher than an oxygen density of the second insulating pattern.