公开(公告)号：US20240258157A1

公开(公告)日：2024-08-01

申请号：US18411164

申请日：2024-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinyong LEE ,  Yungi CHOI ,  Jihye KIM ,  Taewon KIM ,  Yun PARK ,  Jaeyoung SEO ,  Gyeore LEE ,  Heesu EOM

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76814 ,  H01L21/76816 ,  H01L23/5226

Abstract: A wiring structure includes an etch stop film disposed on a substrate. A first insulating film is disposed on the etch stop film. A first wiring layer extends in a vertical direction perpendicular to an upper surface of the substrate and extends through the first insulating film and the etch stop film. A sidewall of the first wiring layer forms a first inclination angle of about 88 degrees to about 90 degrees with respect to a first horizontal direction parallel to the upper surface of the substrate. A surface of the first insulating film and a surface of the etch stop film in direct contact with the first wiring layer have a carbon (C) concentration less than or equal to about 3 at %.