公开(公告)号：US20250008722A1

公开(公告)日：2025-01-02

申请号：US18631884

申请日：2024-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyeyoung KIM ,  Sangho Yun ,  Jeonghee Choi ,  Woojin Jung

IPC: H10B12/00 ,  H01L21/308 ,  H01L21/762

Abstract: A method of forming a pattern is provided. The method includes: forming a first recess in a substrate; forming a first mask layer on the substrate that extends into the first recess; performing a heat treatment process on the first mask layer; removing an upper portion of the first mask layer to form a first mask in the first recess, the first mask comprising a lower portion of the first mask layer; forming a second mask on the substrate and the first mask, the second mask comprising a material having a tolerance with respect to an etching process that is greater than that of the first mask; and performing an etching process on the substrate using the second mask as an etching mask to form the pattern on the substrate.