公开(公告)号：US20240090338A1

公开(公告)日：2024-03-14

申请号：US18308401

申请日：2023-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungil HONG ,  Junghwan PARK ,  Gyuwon KIM ,  Yeonho CHOI

IPC: H10N50/10 ,  G11C5/08 ,  H10B61/00

CPC classification number: H10N50/10 ,  G11C5/08 ,  H10B61/22

Abstract: A magnetic memory device may include a substrate, an data storage pattern disposed on the substrate, and a lower contact plug between the substrate and the data storage pattern, the lower contact plug may include a lower insulating pattern, a lower contact pattern on the lower insulating pattern, and a lower barrier pattern extending along a lower surface and a side surface of the lower insulating pattern and a side surface of the lower contact pattern.