公开(公告)号：US20230058116A1

公开(公告)日：2023-02-23

申请号：US17659135

申请日：2022-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HONG SIK SHIN ,  Sung Woo KANG ,  Dong Kwon KIM

IPC: H01L29/417

Abstract: A semiconductor device includes a substrate, an active pattern disposed on the substrate and that extends in a first horizontal direction, a field insulating layer disposed on the substrate and that surrounds a sidewall of the active pattern, a gate electrode disposed on the field insulating layer and that extends in a second horizontal direction, a source/drain region disposed on a side of the gate electrode, a first interlayer insulating layer disposed on the field insulating layer and that surrounds a portion of a sidewall of the source/drain region, a second interlayer insulating layer disposed on the first interlayer insulating layer and that surrounds a sidewall of the gate electrode, and a source/drain contact that penetrates through the second interlayer insulating layer and is electrically connected to the source/drain region. The source/drain contact includes a skirt that protrudes from a lower sidewall toward the second interlayer insulating.