公开(公告)号：US20210296324A1

公开(公告)日：2021-09-23

申请号：US17031037

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGHO LIM ,  HOOSUNG CHO ,  HONGSOO KIM

IPC: H01L27/115 ,  H01L23/522 ,  H01L21/768

Abstract: A vertical memory device includes circuit patterns of peripheral circuits on a substrate, the circuit patterns including a lower conductive pattern, cell stack structures over the circuit patterns and spaced apart in a first horizontal direction, wherein each of the cell stack structures includes gate electrodes spaced apart in a vertical direction, a first insulating interlayer covering the cell stack structures and a portion between the cell stack structures, a through via contact passing through the first insulating interlayer between the cell stack structures to contact an upper surface of the lower conductive pattern, at least one dummy through via contact passing through the first insulating interlayer between the cell stack structures and disposed adjacent to the through via contact, and upper wiring on the through via contact.