公开(公告)号：US20200227455A1

公开(公告)日：2020-07-16

申请号：US16711295

申请日：2019-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YUN KI LEE ,  JUNG-SAENG KIM ,  HYUNGEUN YOO

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

公开(公告)号：US20220262840A1

公开(公告)日：2022-08-18

申请号：US17739640

申请日：2022-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YUN KI LEE ,  JUNG-SAENG KIM ,  HYUNGEUN YOO

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.