公开(公告)号：US20220189746A1

公开(公告)日：2022-06-16

申请号：US17373214

申请日：2021-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGIL MUN ,  JINYOUNG PARK ,  JONGWOO SUN ,  HYUNGJOO LEE

IPC: H01J37/32 ,  H01L21/683

Abstract: Semiconductor processing equipment and an electrostatic chuck include a semiconductor having: an upper electrode; a gas supplier connected to the upper electrode; and a substrate supporting structure spaced apart from the upper electrode to define a processing volume. The substrate supporting structure supports a substrate and includes: a lower electrode having a side area disposed outside a step formed at an outer perimeter portion of the lower electrode and a processing area disposed inside the step; a first plate disposed on the lower electrode; an attraction electrode disposed on the first plate; and a second plate disposed on the attraction plate. The second plate supports the substrate in a state in which the substrate is laid on an upper surface of the second plate. Each of the first plate and the second plate includes ceramic. The lower electrode has a maximum height at a central portion of the processing area.