公开(公告)号：US20210134785A1

公开(公告)日：2021-05-06

申请号：US17028855

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEWAN YANG ,  WOOTAE KIM ,  HYUNGOCK KIM ,  SANGDO PARK ,  JUN SEOMUN

IPC: H01L27/02 ,  H01L23/522 ,  H01L27/088 ,  H01L21/768

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The method includes placing a standard cell, resizing a power via pattern in such a way that the power via pattern has a different width from a width of other via pattern, and applying different design rules to the power via pattern and the other via pattern, respectively, to perform a routing operation on the standard cell.